Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
نویسندگان
چکیده
Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal-face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO2 mask nþ-GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 0.23Vmm by the transmission line method (TLM) in this initial study. The peak output current density of 1.25A/mm at Vgs1⁄4 3V and extrinsic transconductance of 264mS/mm at Vds1⁄4 5V were observed in 500-nm gate length InAlN/Al/GaN HEMTs passivated by SiN with regrowth contacts.
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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and fT of 370 GHz
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